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industrial & multimarket data sheet rev. 2.0, 2010-04-26 final coolmos e6 650v coolmos? e6 power transistor ipx65r280e6 mosfet metal oxide semiconductor field effect transistor www..net
drain pin 2 gate pin 1 source pin 3 650v coolmos? e6 power transistor IPA65R280E6, ipb65r280e6 ipi65r280e6, ipp65r280e6 ipw65r280e6 final data sheet 2 rev. 2.0, 2010-04-26 1 description coolmos? is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon technologies. coolmos? c6 series combines the experience of the leading sj mosfet supplier with high class innovation. the offered devices provide all benefits of a fast switching sj mosfet while not sacrificing ease of use. extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. features ? extremely low losses due to very low fom r dson *q g and e oss ? very high commutation ruggedness ? easy to use/drive ? jedec 1) qualified, pb-free plating, halogen free applications: adapter please note: for mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v ds @ t j,max 700 v r ds(on),max 0.28 q g,typ 45 nc i d,pulse 39 a e oss @ 400v 3.7 j body diode d i /d t 500 a/s type / ordering code package marking related links ipw65r280e6 pg-to247 ifx coolmos webpage ipb65r280e6 pg-to263 ifx design tools ipi65r280e6 pg-to262 65e6280 ipp65r280e6 pg-to220 IPA65R280E6 pg-to220 fullpak
650v coolmos? e6 power transistor ipx65r280e6 table of contents final data sheet 3 rev. 2.0, 2010-04-26 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table of contents
650v coolmos? e6 power transistor ipx65r280e6 maximum ratings final data sheet 4 rev. 2.0, 2010-04-26 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) 1) limited by t j,max. maximum duty cycle d=0.75 i d - - 13.8 a t c = 25 c 8.7 t c = 100c pulsed drain current 2) 2) pulse width t p limited by t j,max i d,pulse --39 a t c =25 c avalanche energy, single pulse e as - - 290 mj i d =2.4 a, v dd =50 v (see table 21) avalanche energy, repetitive e ar - - 0.44 i d =2.4 a, v dd =50 v avalanche current, repetitive i ar --2.4 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs -20 - 20 v static -30 30 ac (f>1 hz) power dissipation for to-220, to-247, to-262, to-263 p tot - - 104 w t c =25 c power dissipation for to-220 fullpak p tot --32 operating and storage temperature t j , t stg -55 - 150 c mounting torque to-220, to-247 - - 60 ncm m3 and m3.5 screws mounting torque to-220 fullpak 50 m2.5 screws continuous diode forward current i s --12 a t c =25 c diode pulse current 2) i s,pulse --39 a t c =25 c reverse diode dv/dt 3) 3) identical low side and high side switch with identical r g dv/dt - - 15 v/ns v ds =0...400 v, i sd i d , t j =25 c (see table 22) maximum diode commutation speed 3) di f /dt 500 a/s
650v coolmos? e6 power transistor ipx65r280e6 thermal characteristics final data sheet 5 rev. 2.0, 2010-04-26 3 thermal characteristics table 3 thermal characteristics to-220 (ipp65r 280e6),to-247 (ipw65r280e6),to-262 (ipi65r280e6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 1.2c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 4 thermal characteristics to-220fullpak (IPA65R280E6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 3.9c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 5 thermal characteristics to-263 (ipb65r280e6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc -- 1.2c/w thermal resistance, junction - ambient r thja - - 62 smd version, device on pcb, minimal footprint - 35 - smd version, device on pcb, 6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (thickness 70m) for drain connection. pcb is vertical without air stream cooling. s o l d e r i n g te m p e r a t u r e , wave- & reflow soldering allowed t sold - - 260 c reflow msl1
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics final data sheet 6 rev. 2.0, 2010-04-26 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 6 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 650 - - v v gs =0 v, i d =1.0 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =0.44ma zero gate voltage drain current i dss --1a v ds =650 v, v gs =0 v, t j =25 c -10- v ds =650 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 0.25 0.28 v gs =10 v, i d =4.4a, t j =25 c -0.66- v gs =10 v, i d =4.4a, t j =150 c gate resistance r g -7.0- f =1 mhz, open drain table 7 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 950 - pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss -60- effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) -40- v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) - 183 - i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) -11- ns v dd =400 v, v gs =13 v, i d =6.6a, r g =3.4 (see table 20) rise time t r -9- turn-off delay time t d(off) -76- fall time t f -9-
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics final data sheet 7 rev. 2.0, 2010-04-26 table 8 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -5- nc v dd =480 v, i d =6.6a, v gs =0 to 10 v gate to drain charge q gd -24- gate charge total q g -45- gate plateau voltage v plateau -5.5- v table 9 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd -0.9- v v gs =0 v, i f =6.6a, t j =25 c reverse recovery time t rr - 310 - ns v r =400 v, i f =6.6a, d i f /d t =100 a/s reverse recovery charge q rr -3.6- c peak reverse recovery current i rrm -21- a
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics diagrams final data sheet 8 rev. 2.0, 2010-04-26 5 electrical characteristics diagrams table 10 power dissipation to-220, to-247, to-262, to-263 power dissipation to-220 fullpak p tot = f( t c ) p tot = f( t c ) table 11 max. transient thermal impedance to-220, to-247, to-262, to-263 max. transient thermal impedance to-220 fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics diagrams final data sheet 9 rev. 2.0, 2010-04-26 table 12 safe operating area t c =25 c to-220, to-247, to-262, to-263 safe operating area t c =25 c to-220 fullpak i d =f(v ds ); t c =25 c; v gs > 7v; d=0; parameter t p i d =f(v ds ); v gs > 7v ; t c =25 c; d=0; parameter t p table 13 safe operating area t c =80 c to-220, to-247, to-262, to-263 safe operating area t c =80 c to-220 fullpak i d =f(v ds ); v gs > 7v ; t c =80 c; d=0; parameter t p i d =f(v ds ); v gs > 7v ; t c =80 c; d=0; parameter t p
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics diagrams final data sheet 10 rev. 2.0, 2010-04-26 table 14 typ. output characteristics t c =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 15 typ. drain-source on-state resistance drain-source on-state resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =4.4 a; v gs =10 v
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics diagrams final data sheet 11 rev. 2.0, 2010-04-26 table 16 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =4.4 a pulsed table 17 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =2.4 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma
650v coolmos? e6 power transistor ipx65r280e6 electrical characteristics diagrams final data sheet 12 rev. 2.0, 2010-04-26 table 18 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 19 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
650v coolmos? e6 power transistor ipx65r280e6 test circuits final data sheet 13 rev. 2.0, 2010-04-26 6test circuits table 20 switching times test circuit and waveform for inductive load switching times test circuit for inductive load switching time waveform table 21 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 22 test circuit and waveform for diode characteristics test circuit for diode characteristics diode recovery waveform v ds v gs v ds v gs t d(on) t d( o f f) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 f d it /d t rr 10% 90% rrm rrm t rrm v sil00088 q f v i f q s rrm v s tt f /d i d rr t rr tt s t f =+ = rr qq sf + q
650v coolmos? e6 power transistor ipx65r280e6 package outlines final data sheet 14 rev. 2.0, 2010-04-26 7 package outlines figure 1 outlines to-247, dimensions in mm/inches
650v coolmos? e6 power transistor ipx65r280e6 package outlines final data sheet 15 rev. 2.0, 2010-04-26 figure 2 outlines to-220, dimensions in mm/inches
650v coolmos? e6 power transistor ipx65r280e6 package outlines final data sheet 16 rev. 2.0, 2010-04-26 figure 3 outlines to-220 fullpak, dimensions in mm/inches
650v coolmos? e6 power transistor ipx65r280e6 package outlines final data sheet 17 rev. 2.0, 2010-04-26 figure 4 outlines to-262, dimensions in mm/inches
650v coolmos? e6 power transistor ipx65r280e6 package outlines final data sheet 18 rev. 2.0, 2010-04-26 figure 5 outlines to-263, dimensions in mm/inches
650v coolmos? e6 power transistor ipx65r280e6 revision history final data sheet 19 rev. 2.0, 2010-04-26 8 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2010-04-26 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, in cluding without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in th e human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. revision history: 2010-04-26, rev. 2.0 previous revision: revision subjects (major changes since last revision) 2.0 release of final data sheet

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